Vanadium dioxide (VO2) is a strongly-correlated electron materials whose electrons interact strongly with each other. It is expected that VO2 is a suitable material for the application of electric device such as strongly-correleted electron sysytem memory and switching device, because this material has been reported that it shows huge resistance change (metal-insulator transition). In this presentation, at first I would like to explain the principle about the control of Metal-insulator transition(MIT) by electric field and the device structure. Next I will descrive about the detail of the experimental method.
電子同士の相互作用が強く働く、強相関電子系材料である二酸化バナジウム（VO2）は巨大抵抗変化（金属-絶縁体電子相転移）が起きることが報告されており、 強相関電子メモリ、スイッチング等の電子デバイスへの応用が期待される。本発表ではこの金属-絶縁体転移を電界で制御する原理とデバイス構造について説明し、 現在取り組んでいる実験についても報告する。