2019年11月20日

発表者
Halimah Harfah(Kusakabe Laboratory)
指導教員
Koichi Kusakabe
Title
Understanding Spin-Current Control by Induced Electric-Polarization Reversal in hBN-based Magnetic Tunnel Junction
Abstract

Our recent study on Ni(111)/hBN/Ni(111) unveil that the most stable stacking arrangement among 36 possible stacking arrangements shows the cross-correlation functionality coming from the bi-stable state of a rugged hBN plane and the controllable BN polarization [1]. As the magnetic alignment of the upper and lower Ni(111) slabs is anti-parallel, the bistable state of the rugged hBN plane appears. The rugged hBN plane leads to a unique pyramidal structure having two folding state, upward and downward pyramidal structure, which is interchangeable by controlling the BN polarization. The transmission probability calculations show a spin-filtering effect in which the spin-polarized current is controlled by the electric field when a field-induced reversal of the polarization is realized. To achieve the optimum functionality of this spin-current control in hBN-based magnetic tunnel junction, different ferromagnetic slabs are considered to sandwich the hBN layer. Our results show that the charge transfer mechanism from ferromagnetic slab to hBN layer affect the incline of pyramidal structure and the efficiency of spin-filtering effect.

References
  1. H. Harfah, Y. Wicaksono, M. A. Majidi, and K. Kusakabe, arXiv:1905.12252.